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igbt highspeed5fastigbtintrenchstop tm 5technologycopackedwithrapid1 fastandsoftantiparalleldiode IKW50N65H5A 650vduopackigbtanddiode highspeedswitchingseriesfifthgeneration datasheet industrialpowercontrol
2 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 highspeed5fastigbtintrenchstop tm 5technologycopackedwith rapid1fastandsoftantiparalleldiode featuresandbenefits: highspeedh5technologyoffering ?best-in-classefficiencyinhardswitchingandresonant topologies ?plugandplayreplacementofpreviousgenerationigbts ?650vbreakdownvoltage ?lowgatechargeq g ?igbtcopackedwithrapid1fastandsoftantiparalleldiode ?maximumjunctiontemperature175c ?qualifiedaccordingtoaec-q101 ?greenpackage(rohscompliant) ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?batterycharger ?dc/dcconverter packagepindefinition: ?pin1-gate ?pin2&backside-collector ?pin3-emitter keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKW50N65H5A 650v 50a 1.66v 175c k50eh5a pg-to247-3 g c e 1 2 3
3 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 g c e 1 2 3
4 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i c 80.0 53.5 a pulsedcollectorcurrent, t p limitedby t vjmax 1) i cpuls 150.0 a turn off safe operating area v ce 650v, t vj 175c, t p =1s 1) - 150.0 a diodeforwardcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i f 40.0 27.0 a diodepulsedcurrent, t p limitedby t vjmax 1) i fpuls 150.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 270.0 136.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, 2) wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.55 k/w diode thermal resistance, junction - case r th(j-c) 1.50 k/w thermal resistance junction - ambient r th(j-a) 40 k/w 1) defined by design. not subject to production test. 2) package not recommended for surface mount applications g c e 1 2 3
5 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =50.0a t vj =25c t vj =125c t vj =175c - - - 1.66 1.91 2.04 2.10 - - v diode forward voltage v f v ge =0v, i f =25.0a t vj =25c t vj =125c t vj =175c - - - 1.54 1.53 1.50 1.80 - - v gate-emitter threshold voltage v ge(th) i c =0.50ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - 1000.0 40.0 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =50.0a - 62.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 3050 - output capacitance c oes - 69 - reverse transfer capacitance c res - 11 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =50.0a, v ge =15v - 116.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 21 - ns rise time t r - 12 - ns turn-off delay time t d(off) - 173 - ns fall time t f - 11 - ns turn-on energy e on - 0.45 - mj turn-off energy e off - 0.16 - mj total switching energy e ts - 0.61 - mj t vj =25c, v cc =400v, i c =25.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e 1 2 3
6 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 turn-on delay time t d(on) - 20 - ns rise time t r - 4 - ns turn-off delay time t d(off) - 187 - ns fall time t f - 24 - ns turn-on energy e on - 0.10 - mj turn-off energy e off - 0.04 - mj total switching energy e ts - 0.14 - mj t vj =25c, v cc =400v, i c =6.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 58 - ns diode reverse recovery charge q rr - 0.57 - c diode peak reverse recovery current i rrm - 16.7 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -459 - a/s t vj =25c, v r =400v, i f =25.0a, di f /dt =1200a/s diode reverse recovery time t rr - 31 - ns diode reverse recovery charge q rr - 0.26 - c diode peak reverse recovery current i rrm - 13.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1380 - a/s t vj =25c, v r =400v, i f =6.0a, di f /dt =1200a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 20 - ns rise time t r - 13 - ns turn-off delay time t d(off) - 200 - ns fall time t f - 13 - ns turn-on energy e on - 0.61 - mj turn-off energy e off - 0.24 - mj total switching energy e ts - 0.85 - mj t vj =150c, v cc =400v, i c =25.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time t d(on) - 18 - ns rise time t r - 4 - ns turn-off delay time t d(off) - 225 - ns fall time t f - 31 - ns turn-on energy e on - 0.16 - mj turn-off energy e off - 0.07 - mj total switching energy e ts - 0.23 - mj t vj =150c, v cc =400v, i c =6.0a, v ge =0.0/15.0v, r g(on) =12.0 w , r g(off) =12.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e 1 2 3
7 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 diodecharacteristic,at t vj =150c diode reverse recovery time t rr - 85 - ns diode reverse recovery charge q rr - 1.03 - c diode peak reverse recovery current i rrm - 20.6 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -362 - a/s t vj =150c, v r =400v, i f =25.0a, di f /dt =1200a/s diode reverse recovery time t rr - 46 - ns diode reverse recovery charge q rr - 0.49 - c diode peak reverse recovery current i rrm - 18.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -830 - a/s t vj =150c, v r =400v, i f =6.0a, di f /dt =1200a/s g c e 1 2 3
8 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 1. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 30 60 90 120 150 180 210 240 270 figure 2. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 figure 3. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 15 30 45 60 75 90 105 120 135 150 v ge = 20v 18v 15v 12v 10v 8v 7v 6v 5v figure 4. typicaloutputcharacteristic ( t vj =150c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 15 30 45 60 75 90 105 120 135 150 v ge = 20v 18v 15v 12v 10v 8v 7v 6v 5v g c e 1 2 3
9 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 5. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 2.5 3.5 4.5 5.5 6.5 7.5 8.5 0 15 30 45 60 75 90 105 120 135 150 t vj =25c t vj =150c figure 6. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i c =6.25a i c =12.5a i c =25a i c =50a figure 7. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =12 w , r g(off) =12 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 30 60 90 120 150 1 10 100 1000 t d(off) t f t d(on) t r figure 8. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =25a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] t ,switchingtimes[ns] 5 15 25 35 45 55 65 1 10 100 1000 t d(off) t f t d(on) t r g c e 1 2 3
10 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 9. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =25a, r g(on) =12 w , r g(off) =12 w ,dynamictest circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 10. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.5ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 typ. min. max. figure 11. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =12 w , r g(off) =12 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 30 60 90 120 150 0 1 2 3 4 5 6 7 8 9 10 e off e on e ts figure 12. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =25a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] e ,switchingenergylosses[mj] 5 15 25 35 45 55 65 75 85 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 e off e on e ts g c e 1 2 3
11 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 13. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =25a, r g(on) =12 w , r g(off) =12 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =0/15v, i c =25a, r g(on) =12 w , r g(off) =12 w ,dynamic test circuit in figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 e off e on e ts figure 15. typicalgatecharge ( i c =50a) q g ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 v cc =130v v cc =520v figure 16. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 1 10 100 1000 1e+4 c ies c oes c res g c e 1 2 3
12 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 17. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.115657 1.8e-4 2 0.129838 1.7e-3 3 0.156524 0.0144 4 0.147981 0.127484 figure 18. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.2723102 1.3e-4 2 0.3217888 1.1e-3 3 0.4470437 0.0104944 4 0.4588573 0.1086427 figure 19. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 500 700 900 1100 1300 1500 1700 40 50 60 70 80 90 100 110 120 t vj =25c, i f =25a t vj =150c, i f =25a figure 20. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 500 700 900 1100 1300 1500 1700 0.2 0.4 0.6 0.8 1.0 1.2 t vj =25c, i f =25a t vj =150c, i f =25a g c e 1 2 3
13 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 figure 21. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 500 700 900 1100 1300 1500 1700 8 10 12 14 16 18 20 22 24 t vj =25c, i f =25a t vj =150c, i f =25a figure 22. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 500 700 900 1100 1300 1500 1700 -600 -550 -500 -450 -400 -350 -300 -250 -200 t vj =25c, i f =25a t vj =150c, i f =25a figure 23. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80 90 100 110 t vj =25c t vj =150c figure 24. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 i f =12.5a i f =25a i f =50a g c e 1 2 3
14 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 g c e 1 2 3 pg-to247-3
15 IKW50N65H5A highspeedswitchingseriesfifthgeneration rev.2.1,2015-01-15 g c e 1 2 3 pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce
16 IKW50N65H5A high speed switching series fifth generation rev. 2.1, 2015-01-15 revision history IKW50N65H5A previous revision revision date subjects (major changes since last revision) 2.1 2015-01-15 final data sheet g c e 1 2 3 pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce

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